A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates
We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 times 5 um2 emitter) with ft and fmax > 200 GHz were grown directly in windows adjacent to CMOS transistors on silicon template wafers or SOLES (Silicon on Lattices Engineer...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/59435 https://orcid.org/0000-0002-1891-1959 |
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| author | Bulsara, Mayank Fitzgerald, Eugene A. LaRoche, J. R. Kazior, T. E. Lubyshev, D. Fastenau, J. M. Liu, W. K. Urteaga, M. Ha, W. Bergman, J. Choe, M. J. Smith, D. Clark, D. Thompson, R. Drazek, C. Daval, N. Benaissa, L. Augendre, E. |
| author2 | MIT Materials Research Laboratory |
| author_facet | MIT Materials Research Laboratory Bulsara, Mayank Fitzgerald, Eugene A. LaRoche, J. R. Kazior, T. E. Lubyshev, D. Fastenau, J. M. Liu, W. K. Urteaga, M. Ha, W. Bergman, J. Choe, M. J. Smith, D. Clark, D. Thompson, R. Drazek, C. Daval, N. Benaissa, L. Augendre, E. |
| author_sort | Bulsara, Mayank |
| collection | MIT |
| description | We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 times 5 um2 emitter) with ft and fmax > 200 GHz were grown directly in windows adjacent to CMOS transistors on silicon template wafers or SOLES (Silicon on Lattices Engineered Substrates). A BCB based multilayer interconnect process was used to interconnect the InP HBT and Si CMOS to create a differential amplifier demonstration circuit. The heterogeneously integrated differential amplifier serves as the building block for high speed, low power dissipation mixed signal circuits such as ADCs and DACs. |
| first_indexed | 2024-09-23T09:32:15Z |
| format | Article |
| id | mit-1721.1/59435 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T09:32:15Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/594352022-09-26T12:06:53Z A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates Bulsara, Mayank Fitzgerald, Eugene A. LaRoche, J. R. Kazior, T. E. Lubyshev, D. Fastenau, J. M. Liu, W. K. Urteaga, M. Ha, W. Bergman, J. Choe, M. J. Smith, D. Clark, D. Thompson, R. Drazek, C. Daval, N. Benaissa, L. Augendre, E. MIT Materials Research Laboratory Bulsara, Mayank Bulsara, Mayank Fitzgerald, Eugene A. CMOS integrated circuits Differential amplifiers Indium Phosphide Heterojunction bipolar transistors Monolithic integrated circuits Silicon We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 times 5 um2 emitter) with ft and fmax > 200 GHz were grown directly in windows adjacent to CMOS transistors on silicon template wafers or SOLES (Silicon on Lattices Engineered Substrates). A BCB based multilayer interconnect process was used to interconnect the InP HBT and Si CMOS to create a differential amplifier demonstration circuit. The heterogeneously integrated differential amplifier serves as the building block for high speed, low power dissipation mixed signal circuits such as ADCs and DACs. United States. Defense Advanced Research Projects Agency. COSMOS Program (Contract Number N00014-07-C-0629) 2010-10-20T20:11:08Z 2010-10-20T20:11:08Z 2009-07 2009-06 Article http://purl.org/eprint/type/JournalArticle 978-1-4244-2803-8 0149-645X INSPEC Accession Number: 10788899 http://hdl.handle.net/1721.1/59435 Kazior, T.E. et al. “A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates.” Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International. 2009. 1113-1116. © 2009 Institute of Electrical and Electronics Engineers. https://orcid.org/0000-0002-1891-1959 en_US http://dx.doi.org/10.1109/MWSYM.2009.5165896 IEEE MTT-S International Microwave Symposium Digest, 2009 MTT '09 Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | CMOS integrated circuits Differential amplifiers Indium Phosphide Heterojunction bipolar transistors Monolithic integrated circuits Silicon Bulsara, Mayank Fitzgerald, Eugene A. LaRoche, J. R. Kazior, T. E. Lubyshev, D. Fastenau, J. M. Liu, W. K. Urteaga, M. Ha, W. Bergman, J. Choe, M. J. Smith, D. Clark, D. Thompson, R. Drazek, C. Daval, N. Benaissa, L. Augendre, E. A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates |
| title | A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates |
| title_full | A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates |
| title_fullStr | A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates |
| title_full_unstemmed | A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates |
| title_short | A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates |
| title_sort | high performance differential amplifier through the direct monolithic integration of inp hbts and si cmos on silicon substrates |
| topic | CMOS integrated circuits Differential amplifiers Indium Phosphide Heterojunction bipolar transistors Monolithic integrated circuits Silicon |
| url | http://hdl.handle.net/1721.1/59435 https://orcid.org/0000-0002-1891-1959 |
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