Annealing effects on the microstructure of Ge/Si(001) quantum dots

Annealing effects on the microstructure of Ge/Si(001) quantum dots

Ge/Si(001) multilayer islands produced by gas-source molecular-beam epitaxy at 575 °C were investigated using energy-filtering transmission electron microscopy. Results show, for as-grown samples, not only a continuous enlargement of island size in upper layers but also a continuous increase of Ge c...

書誌詳細
主要な著者:	Liao, X, Zou, J, Cockayne, D, Wan, J, Jiang, Z, Jin, G, Wang, K
フォーマット:	Journal article
言語:	English
出版事項:	2001

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