Annealing effects on the microstructure of Ge/Si(001) quantum dots
Ge/Si(001) multilayer islands produced by gas-source molecular-beam epitaxy at 575 °C were investigated using energy-filtering transmission electron microscopy. Results show, for as-grown samples, not only a continuous enlargement of island size in upper layers but also a continuous increase of Ge c...
| المؤلفون الرئيسيون: | , , , , , , |
|---|---|
| التنسيق: | Journal article |
| اللغة: | English |
| منشور في: |
2001
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