Atomic layer deposited electron transport Layers in efficient organometallic halide perovskite devices

Atomic layer deposited electron transport Layers in efficient organometallic halide perovskite devices

Amorphous TiO2 and SnO2 electron transport layers (ETLs) were deposited by low-temperature atomic layer deposition (ALD). Surface morphology and x-ray photoelectron spectroscopy (XPS) indicate uniform and pinhole free coverage of these ALD hole blocking layers. Both mesoporous and planar perovskite...

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Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид: McCarthy, MM, Walter, A, Moon, S-J, Noel, NK, O’Brien, S, Pemble, ME, Nicolay, S, Wenger, B, Snaith, HJ, Povey, IM
Формат: Conference item
Хэвлэсэн: Cambridge University Press 2018

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