Atomic layer deposited electron transport Layers in efficient organometallic halide perovskite devices

Amorphous TiO2 and SnO2 electron transport layers (ETLs) were deposited by low-temperature atomic layer deposition (ALD). Surface morphology and x-ray photoelectron spectroscopy (XPS) indicate uniform and pinhole free coverage of these ALD hole blocking layers. Both mesoporous and planar perovskite...

תיאור מלא

מידע ביבליוגרפי
Main Authors:	McCarthy, MM, Walter, A, Moon, S-J, Noel, NK, O’Brien, S, Pemble, ME, Nicolay, S, Wenger, B, Snaith, HJ, Povey, IM
פורמט:	Conference item
יצא לאור:	Cambridge University Press 2018

Atomic layer deposited electron transport Layers in efficient organometallic halide perovskite devices

פריטים דומים