Atomic layer deposited electron transport Layers in efficient organometallic halide perovskite devices
Amorphous TiO2 and SnO2 electron transport layers (ETLs) were deposited by low-temperature atomic layer deposition (ALD). Surface morphology and x-ray photoelectron spectroscopy (XPS) indicate uniform and pinhole free coverage of these ALD hole blocking layers. Both mesoporous and planar perovskite...
| Principais autores: | , , , , , , , , , |
|---|---|
| Formato: | Conference item |
| Publicado em: |
Cambridge University Press
2018
|