RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON

Veure altres versions (1)

Dades bibliogràfiques
Autors principals:	Fell, T, Wilshaw, P
Format:	Journal article
Publicat:	1989

Ítems similars

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
per: Fell, T, et al.
Publicat: (1989)

RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
per: Wilshaw, P, et al.
Publicat: (1989)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
per: Wilshaw, P, et al.
Publicat: (1989)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
per: Wilshaw, P, et al.
Publicat: (1989)

THE EFFECT OF DIFFERENT TRANSITION-METALS ON THE RECOMBINATION EFFICIENCY OF DISLOCATIONS
per: Fell, T, et al.
Publicat: (1991)

EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
per: Fell, T, et al.
Publicat: (1993)

DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
per: Wilshaw, P, et al.
Publicat: (1986)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
per: Fell, T, et al.
Publicat: (1991)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
per: Fell, T, et al.
Publicat: (1991)

An SEM EBIC study of the electronic properties of dislocations in silicon
per: Wilshaw, P, et al.
Publicat: (1984)

On the locking of dislocations by oxygen in silicon
per: Senkader, S, et al.
Publicat: (2001)

Impurity locking of dislocations in silicon
per: Giannattasio, A, et al.
Publicat: (2004)

The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon
per: Giannattasio, A, et al.
Publicat: (2004)

The segregation behaviour of oxygen at dislocations in silicon
per: Senkader, S, et al.
Publicat: (1999)

Locking of dislocations by oxygen in Cz-silicon
per: Senkader, S, et al.
Publicat: (1999)

AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE
per: Galloway, S, et al.
Publicat: (1993)

Generation of dislocation glide loops in Czochralski silicon
per: Giannattasio, A, et al.
Publicat: (2002)

Dislocation locking by nitrogen impurities in FZ-silicon
per: Giannattasio, A, et al.
Publicat: (2003)

Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
per: Senkader, S, et al.
Publicat: (2001)

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
per: Ourmazd, A, et al.
Publicat: (1983)

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON
per: Ourmazd, A, et al.
Publicat: (1983)

Chemical etching to dissolve dislocation cores in multicrystalline silicon
per: Gregori, N, et al.
Publicat: (2012)

Chemical etching to dissolve dislocation cores in multicrystalline silicon
per: Gregori, N, et al.
Publicat: (2012)

Nitrogen diffusion and interaction with dislocations in single-crystal silicon
per: Alpass, C, et al.
Publicat: (2009)

EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS
per: A. V. Mudryi, et al.
Publicat: (2015-03-01)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
per: Murphy, J, et al.
Publicat: (2006)

Dislocation locking in silicon by oxygen and oxygen transport at low temperatures
per: Senkader, S, et al.
Publicat: (2004)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
per: Murphy, J, et al.
Publicat: (2006)

Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations
per: Alpass, C, et al.
Publicat: (2009)

The influence of nitrogen on dislocation locking in float-zone silicon
per: Murphy, J, et al.
Publicat: (2005)

A room temperature cathodoluminescence study of dislocations in silicon
per: Stowe, D, et al.
Publicat: (2004)

The influence of nitrogen on dislocation locking in float-zone silicon
per: Murphy, J, et al.
Publicat: (2005)

NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.
per: Wilshaw, P, et al.
Publicat: (1985)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
per: Giannattasio, A, et al.
Publicat: (2005)

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.
per: Ourmazd, A, et al.
Publicat: (1982)

THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON
per: Ourmazd, A, et al.
Publicat: (1983)

Electron beam induced current investigations of transition metal impurities at extended defects in silicon
per: Wilshaw, P, et al.
Publicat: (1995)

Nitrogen in silicon: Diffusion at 500-750 degrees C and interaction with dislocations
per: Alpass, C, et al.
Publicat: (2009)

Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures
per: Senkader, S, et al.
Publicat: (2002)

Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon
per: Alpass, C, et al.
Publicat: (2009)