Growth of InP nanowires on silicon using a thin buffer layer

InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology...

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Bibliographic Details
Main Authors: Fonseka, H, Tan, H, Kang, J, Paiman, S, Gao, Q, Parkinson, P, Jagadish, C
Format: Conference item
Published: 2012