Growth of InP nanowires on silicon using a thin buffer layer
InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology...
Main Authors: | , , , , , , |
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Format: | Conference item |
Published: |
2012
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