Fast switching of high current WBG power devices
Wide-band-gap power devices, such as Gallium Nitride High Electron Mobility Transistors and Silicon Carbide Field-effect Transistors, offer impressively fast switching performance compared to their traditional Silicon counterparts. However, Si designs have not stood still, and new generations of the...
| Główni autorzy: | , , , , , , , |
|---|---|
| Format: | Conference item |
| Język: | English |
| Wydane: |
VDE Verlag
2022
|