Fast switching of high current WBG power devices

Wide-band-gap power devices, such as Gallium Nitride High Electron Mobility Transistors and Silicon Carbide Field-effect Transistors, offer impressively fast switching performance compared to their traditional Silicon counterparts. However, Si designs have not stood still, and new generations of the...

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Библиографические подробности
Главные авторы: Shelton, E, Ristic-Smith, A, Bruford, J, Rogers, D, Carter, J, Louco, L, Beadman, M, Palmer, P
Формат: Conference item
Язык:English
Опубликовано: VDE Verlag 2022