Surface ionisation of molecular H-2 and atomic H Rydberg states at doped silicon surfaces

The detection of ions or electrons from the surface ionisation of molecular H2 and atomic H Rydberg states incident at doped Si surfaces is investigated experimentally to analyse the effect of the dopant charge distribution on the surface-ionisation processes. In both experimental studies, the molec...

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Bibliografische gegevens
Hoofdauteurs: Sashikesh, G, So, E, Ford, MS, Softley, T
Formaat: Journal article
Taal:English
Gepubliceerd in: 2014