Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy

Míreanna comhchosúla

• Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells
  de réir: Bennett, SE, et al.
  Foilsithe / Cruthaithe: (2011)
• Characterisation of compound semiconductors grown by molecular beam epitaxy
  de réir: Zhang, Peng Hua
  Foilsithe / Cruthaithe: (2009)
• The structural characterisation of molecular beam epitaxy-grown exchange-biased bilayers
  de réir: Choi, Y, et al.
  Foilsithe / Cruthaithe: (2002)
• Atom-probe tomography characterization of the oxidation of stainless steel
  de réir: Lozano-Perez, S, et al.
  Foilsithe / Cruthaithe: (2010)
• Atom-probe tomography characterization of the oxidation of stainless steel
  de réir: Lozano-Perez, S, et al.
  Foilsithe / Cruthaithe: (2010)