Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy

Slični predmeti

• Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells
  od: Bennett, SE, i dr.
  Izdano: (2011)
• Characterisation of compound semiconductors grown by molecular beam epitaxy
  od: Zhang, Peng Hua
  Izdano: (2009)
• The structural characterisation of molecular beam epitaxy-grown exchange-biased bilayers
  od: Choi, Y, i dr.
  Izdano: (2002)
• Atom-probe tomography characterization of the oxidation of stainless steel
  od: Lozano-Perez, S, i dr.
  Izdano: (2010)
• Atom-probe tomography characterization of the oxidation of stainless steel
  od: Lozano-Perez, S, i dr.
  Izdano: (2010)