REACTION-MECHANISMS FOR THE PHOTON-ENHANCED ETCHING OF SEMICONDUCTORS - AN INVESTIGATION OF THE UV-STIMULATED INTERACTION OF CHLORINE WITH SI(100)
Autors principals: | Jackman, R, Ebert, H, Foord, J |
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Format: | Journal article |
Publicat: |
1986
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Ítems similars
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THE INTERACTION OF WF6 WITH SI(100) - THERMAL AND PHOTON INDUCED REACTIONS
per: Jackman, R, et al.
Publicat: (1988) -
ADSORPTION, ETCHING AND PHOTOINDUCED REACTIONS AT THE SI(100)-CCL4 INTERFACE
per: French, C, et al.
Publicat: (1989) -
Adsorption, etching and photo-induced reactions at the Si(100)-CCl 4 interface
per: French, C, et al.
Publicat: (1989) -
CHEMICAL PRECURSORS FOR GAAS ETCHING WITH LOW-ENERGY ION-BEAMS - CHLORINE ADSORPTION ON GAAS(100)
per: Jackman, R, et al.
Publicat: (1991) -
THERMAL AND ION-BEAM-INDUCED ETCHING OF INP WITH CHLORINE
per: Murrell, A, et al.
Publicat: (1989)