The non-uniform composition profile in Ge(Si)/Si(001) quantum dots
The composition profile of a pyramid-shaped Ge(Si)/Si(001) quantum dot has been calculated using a combination of molecular static relaxations and a Monte Carlo process. The strain field and the displacement field of the non-uniformly alloyed quantum dot have been calculated using finite element ana...
| 主要な著者: | , , |
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| フォーマット: | Conference item |
| 出版事項: |
2004
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