Structural and electronic properties of an abrupt 4H-SiC(0001)/SiO2 interface model: Classical molecular dynamics simulations and density functional calculations
Κύριοι συγγραφείς: | Devynck, F, Giustino, F, Broqvist, P, Pasquarello, A |
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Μορφή: | Journal article |
Έκδοση: |
2007
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Παρόμοια τεκμήρια
Παρόμοια τεκμήρια
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Atomistic model of the 4H(0001)SiC-SiO2 interface: structural and electronic properties
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Atomistic model of the 4H(0001)SiC-SiO2 interface: Structural and electronic properties
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Electronic structure at realistic Si(100)-SiO2 interfaces
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