Structural and electronic properties of an abrupt 4H-SiC(0001)/SiO2 interface model: Classical molecular dynamics simulations and density functional calculations

Structural and electronic properties of an abrupt 4H-SiC(0001)/SiO2 interface model: Classical molecular dynamics simulations and density functional calculations

Bibliográfalaš dieđut
Váldodahkkit:	Devynck, F, Giustino, F, Broqvist, P, Pasquarello, A
Materiálatiipa:	Journal article
Almmustuhtton:	2007

Geahča maid

Abrupt model interface for the 4H(1000)SiC-SiO2 interface
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Atomistic model of the 4H(0001)SiC-SiO2 interface: structural and electronic properties
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Atomistic model of the 4H(0001)SiC-SiO2 interface: Structural and electronic properties
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Atomic-scale modelling of the Si(100)-SiO(2) interface
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Electronic structure at realistic Si(100)-SiO2 interfaces
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Almmustuhtton: (2004)

Infrared spectra at surfaces and interfaces from first principles: evolution of the spectra across the Si(100)-SiO2 interface.
Dahkki: Giustino, F, et al.
Almmustuhtton: (2005)

Proton-induced fixed positive charge at the Si(100)-SiO2 interface.
Dahkki: Godet, J, et al.
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Calculating Study on Properties of Al (111)/6H-SiC (0001) Interfaces
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Atomistic models of the Si(100)-SiO(2) interface: structural, electronic and dielectric properties
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Modeling of Si 2p core-level shifts at Si-(ZrO(2))(x)(SiO(2))(1-x) interfaces
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Almmustuhtton: (2002)

Dielectric and infrared properties of ultrathin SiO2 layers on Si(100)
Dahkki: Giustino, F, et al.
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Band offsets at the Si/SiO2 interface from many-body perturbation theory
Dahkki: Shaltaf, R, et al.
Almmustuhtton: (2008)

Band offsets at the Si/SiO2 interface from many-body perturbation theory.
Dahkki: Shaltaf, R, et al.
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Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface
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Si doping superlattice structure on 6H-SiC(0001)
Dahkki: Li Lianbi, et al.
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Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides
Dahkki: Giustino, F, et al.
Almmustuhtton: (2004)

Bi-intercalated epitaxial graphene on SiC(0001)
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Almmustuhtton: (2024-01-01)

Ultrahigh Vacuum Preparation and Passivation of Abrupt SiO2/Si(111) Interfaces
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Almmustuhtton: (2007-12-01)

Crystal Chemistry at Interfaces Between Liquid Al and Polar SiC{0001} Substrates
Dahkki: Changming Fang, et al.
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Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO2 interfaces with gate oxides annealed in NO or POCl3
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Almmustuhtton: (2024-01-01)

Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature
Dahkki: Takuma Kobayashi, et al.
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Intercalation of Au Atoms into SiC(0001)/Buffer Interfaces–A First-Principles Density Functional Theory Study
Dahkki: Amirhossein Bayani, et al.
Almmustuhtton: (2020-06-01)

Impact of post-deposition annealing on SiO2/SiC interfaces formed by plasma nitridation of the SiC surface and SiO2 deposition
Dahkki: Hiroki Fujimoto, et al.
Almmustuhtton: (2024-01-01)

Effect of hydrogen passivation on the decoupling of graphene on SiC(0001) substrate: First-principles calculations
Dahkki: Kang Liu, et al.
Almmustuhtton: (2017-08-01)

Impact of the oxidation temperature on the density of single-photon sources formed at SiO2/SiC interface
Dahkki: Mitsuaki Kaneko, et al.
Almmustuhtton: (2023-09-01)

Characterization of SiO<sub>2</sub>/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review
Dahkki: Patrick Fiorenza, et al.
Almmustuhtton: (2019-06-01)

Effects of Al on epitaxial graphene grown on 6H-SiC(0001)
Dahkki: C Xia, et al.
Almmustuhtton: (2014-01-01)

Ultrasonic-assisted anodic oxidation of 4H-SiC (0001) surface
Dahkki: Xiaozhe Yang, et al.
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First-principles theory of infrared absorption spectra at surfaces and interfaces: Application to the Si(100): H(2)O surface
Dahkki: Giustino, F, et al.
Almmustuhtton: (2008)

The nontrivial electronic structure of Bi/Sb honeycombs on SiC(0001)
Dahkki: Chia-Hsiu Hsu, et al.
Almmustuhtton: (2015-01-01)

Growth of 3C-SiC Films on Si (111) and Sapphire (0001) Substrates by MOCVD
Dahkki: R. E. Beisenov, et al.
Almmustuhtton: (2013-01-01)

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)
Dahkki: F Fromm, et al.
Almmustuhtton: (2013-01-01)

Density functional theory study on the effect of NO annealing for SiC(0001) surface with atomic-scale steps
Dahkki: Mitsuharu Uemoto, et al.
Almmustuhtton: (2024-01-01)

Structural and electronic properties of the transition layer at the SiO2/4H-SiC interface
Dahkki: Wenbo Li, et al.
Almmustuhtton: (2015-01-01)

Routes to rupture and folding of graphene on rough 6H-SiC(0001) and their identification
Dahkki: M. Temmen, et al.
Almmustuhtton: (2013-10-01)

Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface
Dahkki: Efi Dwi Indari, et al.
Almmustuhtton: (2019-04-01)

Small scale rotational disorder observed in epitaxial graphene on SiC(0001)
Dahkki: Andrew L Walter, et al.
Almmustuhtton: (2013-01-01)

Investigating the mechanism of SiO2/4H-SiC interface traps passivation by boron incorporation through FT-IR analysis of near-interface SiO2
Dahkki: Runze Wang, et al.
Almmustuhtton: (2024-01-01)

N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces
Dahkki: Hironori Yoshioka, et al.
Almmustuhtton: (2015-01-01)

Synthesis of biomorphic SiC and SiO2 ceramics
Dahkki: Egelja Adela, et al.
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