Structural and electronic properties of an abrupt 4H-SiC(0001)/SiO2 interface model: Classical molecular dynamics simulations and density functional calculations

Ítems similars

• Abrupt model interface for the 4H(1000)SiC-SiO2 interface
  per: Devynck, F, et al.
  Publicat: (2005)
• Atomistic model of the 4H(0001)SiC-SiO2 interface: structural and electronic properties
  per: Devynck, F, et al.
  Publicat: (2007)
• Atomistic model of the 4H(0001)SiC-SiO2 interface: Structural and electronic properties
  per: Devynck, F, et al.
  Publicat: (2007)
• Atomic-scale modelling of the Si(100)-SiO(2) interface
  per: Giustino, F, et al.
  Publicat: (2005)
• Electronic structure at realistic Si(100)-SiO2 interfaces
  per: Giustino, F, et al.
  Publicat: (2004)