Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy

Eitemau Tebyg

• Inhomogeneous sources of misfit dislocation generation in InxGa1-xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy
  gan: Zou, J, et al.
  Cyhoeddwyd: (1997)
• Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
  gan: RussellHarriott, J, et al.
  Cyhoeddwyd: (1996)
• MISFIT DISLOCATIONS AND CRITICAL THICKNESS IN INGAAS/GAAS HETEROSTRUCTURE SYSTEMS
  gan: Zou, J, et al.
  Cyhoeddwyd: (1993)
• Oval defects in InGaAs/GaAs heterostructures
  gan: Russell-Harriott, J, et al.
  Cyhoeddwyd: (1998)
• Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations
  gan: A. A. Maldzhy, et al.
  Cyhoeddwyd: (2006-12-01)