Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
The locking of dislocations by oxygen has been investigated experimentally in Czochralski silicon (Cz-Si) with different concentrations of shallow dopants. Specimens containing well-defined arrays of dislocation half-loops were subjected to isothermal anneals in the 350-550°C temperature range, and...
| المؤلفون الرئيسيون: | , , , , |
|---|---|
| التنسيق: | Journal article |
| اللغة: | English |
| منشور في: |
American Institute of Physics
2006
|
| الموضوعات: |
Search Result 1
