Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)

Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς:	Goldfarb, I, Owen, J, Hayden, P, Bowler, DR, Miki, K, Briggs, G
Μορφή:	Journal article
Έκδοση:	1997

Παρόμοια τεκμήρια

Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms
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Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
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Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
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Competing growth mechanisms of Ge/Si(001) coherent clusters
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Nucleation of ''hut'' pits and clusters during gas-source molecular-beam epitaxy of Ge/Si(001) in in situ scanning tunnelng microscopy
ανά: Goldfarb, I, κ.ά.
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Gas-source growth of group IV semiconductors: II. Growth regimes and the effect of hydrogen
ανά: Owen, J, κ.ά.
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Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
ανά: Goldfarb, I, κ.ά.
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Reactive deposition epitaxy of CoSi2 nanostructures on Si(001): Nucleation and growth and evolution of dots during anneal
ανά: Goldfarb, I, κ.ά.
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In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001)
ανά: Goldfarb, I, κ.ά.
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Diffusion of paired hydrogen on Si(001)
ανά: Bowler, DR, κ.ά.
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Hydrogen diffusion on Si(001)
ανά: Owen, J, κ.ά.
Έκδοση: (1996)

A theoretical investigation of gas source growth of the Si(001) surface
ανά: Bowler, D, κ.ά.
Έκδοση: (1997)

Atomically perfect bismuth lines on Si(001)
ανά: Miki, K, κ.ά.
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Bismuth-induced structures on Si(001) surfaces
ανά: Miki, K, κ.ά.
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Using growth kinetics for nanoengineering of Si-Ge surfaces
ανά: Goldfarb, I, κ.ά.
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An experimental-theoretical study of the behaviour of hydrogen on the Si(001) surface
ανά: Bowler, DR, κ.ά.
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Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)
ανά: Jian-Huan Wang, κ.ά.
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Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)
ανά: Wedler, G, κ.ά.
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IDENTIFICATION OF THE SI(001) MISSING DIMER DEFECT STRUCTURE BY LOW-BIAS VOLTAGE STM AND LDA MODELING
ανά: Owen, J, κ.ά.
Έκδοση: (1995)

Growth and applications of GeSn-related group-IV semiconductor materials
ανά: Shigeaki Zaima, κ.ά.
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Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
ανά: Liao, X, κ.ά.
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Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)
ανά: Bergamaschini R, κ.ά.
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Self-assembled metal-semiconductor compound nanocrystals on Group IV semiconductor surfaces
ανά: Goldfarb, I, κ.ά.
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Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001)
ανά: Silu Yan, κ.ά.
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A proposed structure of the nucleus for gas-source epitaxial growth of silicon
ανά: Owen, J, κ.ά.
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Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition
ανά: Max Franck, κ.ά.
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Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
ανά: Zou, J, κ.ά.
Έκδοση: (2002)

CMOS-compatible dense arrays of Ge quantum dots on the Si(001) surface: hut cluster nucleation, atomic structure and array life cycle during UHV MBE growth
ανά: Arapkina Larisa, κ.ά.
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Nonuniform alloying in Ge(Si)/Si(001) quantum dots
ανά: Lang, C, κ.ά.
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Finite element analysis of CoSi2 nanocrystals on Si(001)
ανά: Goldfarb, I, κ.ά.
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Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si
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Limited-area growth of Ge and SiGe on Si
ανά: Kim, Meekyung, Ph. D. Massachusetts Institute of Technology
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Bias-dependent STM investigations of trimethylgallium adsorption on Si(001) at elevated temperatures
ανά: Norenberg, H, κ.ά.
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Stress and relief of misfit strain of Ge/Si(001)
ανά: Wedler, G, κ.ά.
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Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility
ανά: Yuryev Vladimir, κ.ά.
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Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
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Ordered GeSi nanorings grown on patterned Si (001) substrates
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[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
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