Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)
Main Authors: | Goldfarb, I, Owen, J, Hayden, P, Bowler, DR, Miki, K, Briggs, G |
---|---|
Format: | Journal article |
Published: |
1997
|
Similar Items
-
Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms
by: Owen, J, et al.
Published: (1997) -
Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
by: Goldfarb, I, et al.
Published: (1997) -
Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
by: Owen, J, et al.
Published: (1997) -
Competing growth mechanisms of Ge/Si(001) coherent clusters
by: Goldfarb, I, et al.
Published: (1997) -
Nucleation and growth of CoSi2 dots on Si(001)
by: Goldfarb, I, et al.
Published: (1999)