Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)

Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)

Bibliografski detalji
Glavni autori:	Goldfarb, I, Owen, J, Hayden, P, Bowler, DR, Miki, K, Briggs, G
Format:	Journal article
Izdano:	1997

Slični predmeti

Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms
od: Owen, J, i dr.
Izdano: (1997)

Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
od: Goldfarb, I, i dr.
Izdano: (1997)

Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
od: Owen, J, i dr.
Izdano: (1997)

Competing growth mechanisms of Ge/Si(001) coherent clusters
od: Goldfarb, I, i dr.
Izdano: (1997)

Nucleation and growth of CoSi2 dots on Si(001)
od: Goldfarb, I, i dr.
Izdano: (1999)

Nucleation of ''hut'' pits and clusters during gas-source molecular-beam epitaxy of Ge/Si(001) in in situ scanning tunnelng microscopy
od: Goldfarb, I, i dr.
Izdano: (1997)

Gas-source growth of group IV semiconductors: II. Growth regimes and the effect of hydrogen
od: Owen, J, i dr.
Izdano: (1997)

Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
od: Goldfarb, I, i dr.
Izdano: (1999)

Reactive deposition epitaxy of CoSi2 nanostructures on Si(001): Nucleation and growth and evolution of dots during anneal
od: Goldfarb, I, i dr.
Izdano: (1999)

In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001)
od: Goldfarb, I, i dr.
Izdano: (1998)

Diffusion of paired hydrogen on Si(001)
od: Bowler, DR, i dr.
Izdano: (1998)

Hydrogen diffusion on Si(001)
od: Owen, J, i dr.
Izdano: (1996)

A theoretical investigation of gas source growth of the Si(001) surface
od: Bowler, D, i dr.
Izdano: (1997)

Atomically perfect bismuth lines on Si(001)
od: Miki, K, i dr.
Izdano: (1999)

Bismuth-induced structures on Si(001) surfaces
od: Miki, K, i dr.
Izdano: (1999)

Using growth kinetics for nanoengineering of Si-Ge surfaces
od: Goldfarb, I, i dr.
Izdano: (1998)

An experimental-theoretical study of the behaviour of hydrogen on the Si(001) surface
od: Bowler, DR, i dr.
Izdano: (2000)

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)
od: Jian-Huan Wang, i dr.
Izdano: (2021-03-01)

Intrinsic stress upon Stranski-Krastanov growth of Ge on Si(001)
od: Wedler, G, i dr.
Izdano: (1998)

IDENTIFICATION OF THE SI(001) MISSING DIMER DEFECT STRUCTURE BY LOW-BIAS VOLTAGE STM AND LDA MODELING
od: Owen, J, i dr.
Izdano: (1995)

Growth and applications of GeSn-related group-IV semiconductor materials
od: Shigeaki Zaima, i dr.
Izdano: (2015-07-01)

Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
od: Liao, X, i dr.
Izdano: (2002)

Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)
od: Bergamaschini R, i dr.
Izdano: (2010-01-01)

Self-assembled metal-semiconductor compound nanocrystals on Group IV semiconductor surfaces
od: Goldfarb, I, i dr.
Izdano: (2000)

Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001)
od: Silu Yan, i dr.
Izdano: (2022-03-01)

A proposed structure of the nucleus for gas-source epitaxial growth of silicon
od: Owen, J, i dr.
Izdano: (1997)

Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition
od: Max Franck, i dr.
Izdano: (2022-09-01)

Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
od: Zou, J, i dr.
Izdano: (2002)

CMOS-compatible dense arrays of Ge quantum dots on the Si(001) surface: hut cluster nucleation, atomic structure and array life cycle during UHV MBE growth
od: Arapkina Larisa, i dr.
Izdano: (2011-01-01)

Nonuniform alloying in Ge(Si)/Si(001) quantum dots
od: Lang, C, i dr.
Izdano: (2003)

Finite element analysis of CoSi2 nanocrystals on Si(001)
od: Goldfarb, I, i dr.
Izdano: (2002)

Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si
od: Max Franck, i dr.
Izdano: (2025-01-01)

Limited-area growth of Ge and SiGe on Si
od: Kim, Meekyung, Ph. D. Massachusetts Institute of Technology
Izdano: (2011)

Bias-dependent STM investigations of trimethylgallium adsorption on Si(001) at elevated temperatures
od: Norenberg, H, i dr.
Izdano: (1998)

Stress and relief of misfit strain of Ge/Si(001)
od: Wedler, G, i dr.
Izdano: (1998)

Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility
od: Yuryev Vladimir, i dr.
Izdano: (2011-01-01)

Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
od: Aleksei V. Kolesnikov, i dr.
Izdano: (2015-03-01)

Ordered GeSi nanorings grown on patterned Si (001) substrates
od: Ma Yingjie, i dr.
Izdano: (2011-01-01)

[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
od: Liao, X, i dr.
Izdano: (2004)

Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor
od: Ewa Dumiszewska, i dr.
Izdano: (2022-06-01)