Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)

Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)

Bibliografiska uppgifter
Huvudupphovsmän:	Goldfarb, I, Owen, J, Hayden, P, Bowler, DR, Miki, K, Briggs, G
Materialtyp:	Journal article
Publicerad:	1997

Liknande verk

Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms
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Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
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Nonuniform alloying in Ge(Si)/Si(001) quantum dots
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Finite element analysis of CoSi2 nanocrystals on Si(001)
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Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si
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Limited-area growth of Ge and SiGe on Si
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Bias-dependent STM investigations of trimethylgallium adsorption on Si(001) at elevated temperatures
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Stress and relief of misfit strain of Ge/Si(001)
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Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility
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Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
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Ordered GeSi nanorings grown on patterned Si (001) substrates
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[001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001).
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