Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals

Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals

High mobility p-type ZnO:AlN thin films have been efficiently realized by utilizing pre-activated nitrogen (N) plasma sources with an inductively coupled dual target co-sputtering system. High density of N-plasma-radicals was generated with an additional RF power applied through a ring-shaped quartz...

Bibliografski detalji
Glavni autori:	Lee, J, Cha, S, Kim, J, Seo, D, Bin Im, W, Hong, J
Format:	Journal article
Jezik:	English
Izdano:	2009

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