EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON

Ítems similars

• QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
  per: Fell, T, et al.
  Publicat: (1991)
• QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
  per: Fell, T, et al.
  Publicat: (1991)
• AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE
  per: Galloway, S, et al.
  Publicat: (1993)
• An SEM EBIC study of the electronic properties of dislocations in silicon
  per: Wilshaw, P, et al.
  Publicat: (1984)
• TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
  per: Ourmazd, A, et al.
  Publicat: (1983)