ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING

ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING

Zobrazit další vydání (1)

Podrobná bibliografie
Hlavní autoři:	Czernuszka, J, Long, N, Hirsch, P
Médium:	Journal article
Vydáno:	1991

Podobné jednotky

ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING
Autor: Czernuszka, J, a další
Vydáno: (1991)

ELECTRON CHANNELING CONTRAST IMAGING OF DEFECTS IN SEMICONDUCTORS
Autor: Wilkinson, A, a další
Vydáno: (1993)

ELECTRON CHANNELING CONTRAST IMAGING (ECCI) OF DISLOCATIONS IN BULK SPECIMENS
Autor: Czernuszka, J, a další
Vydáno: (1991)

ELECTRON CHANNELING CONTRAST IMAGING OF INTERFACIAL DEFECTS IN STRAINED SILICON-GERMANIUM LAYERS ON SILICON
Autor: Wilkinson, A, a další
Vydáno: (1993)

Effects of surface relaxation on electron channelling contrast images of misfit dislocations
Autor: Wilkinson, A, a další
Vydáno: (1994)

IMAGING OF SEMICONDUCTOR DEFECTS USING ION CHANNELING
Autor: King, P, a další
Vydáno: (1993)

Multiple scattering simulation of electron channelling contrast images of dislocations at interfaces
Autor: Dudarev, S, a další
Vydáno: (1995)

EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS
Autor: Wilshaw, P, a další
Vydáno: (1991)

IMAGING OF DISLOCATIONS USING BACKSCATTERED ELECTRONS IN A SCANNING ELECTRON-MICROSCOPE
Autor: Czernuszka, J, a další
Vydáno: (1990)

THE EFFECTS OF SURFACE STRESS-RELAXATION ON ELECTRON CHANNELING CONTRAST IMAGES OF DISLOCATIONS
Autor: Wilkinson, A, a další
Vydáno: (1995)

Characterizing dislocation structures in bulk fatigued copper single crystals using electron channelling contrast imaging (ECCI)
Autor: Ahmed, J, a další
Vydáno: (1997)

Survey of semiconductor physics : electrons and other particles in bulk semiconductors /
Autor: 342198 Boer, Karl W.
Vydáno: (1990)

Electron channelling contrast imaging of dislocation substructures in the vicinity of short fatigue cracks in Cu
Autor: Ahmed, J, a další
Vydáno: (1998)

Defect electronics in semiconductors
Autor: 269076 Matare, Herbert Franz
Vydáno: (1971)

The methodology of modeling of electronic properties of bulk semiconductor compounds
Autor: A. V. Krivosheeva, a další
Vydáno: (2019-06-01)

OpenECCI - A Streamlined Open-Source Workflow for Electron Channelling Contrast Imaging of Crystal Defects
Autor: Xu Zhou, a další
Vydáno: (2024-01-01)

Electron channeling and ion channeling contrast imaging of dislocations in nitride thin films
Autor: Trager-Cowan, C, a další
Vydáno: (2008)

Theory of defects in solids : electronic structure of defects in insulators and semiconductors
Autor: 375532 Stoneham, A. M.
Vydáno: (1975)

EFFECT OF SURFACE-CHARGE ON THE DISLOCATION MOBILITY IN SEMICONDUCTORS
Autor: Czernuszka, J
Vydáno: (1989)

EFFECT OF SURFACE-CHARGE ON THE DISLOCATION MOBILITY IN SEMICONDUCTORS
Autor: Czernuszka, J
Vydáno: (1989)

Examination of dislocation substructures in fatigued Cu using electron channelling contrast imaging
Autor: Ahmed, J, a další
Vydáno: (1999)

Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging
Autor: Trager-Cowan, C, a další
Vydáno: (2006)

Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging
Autor: Trager-Cowan, C, a další
Vydáno: (2006)

Hydrogen in semiconductors : bulk and surface properties/
Autor: Trieste IUPAP-ICTP Semiconductor Symposium (6th : 1990 : Trieste, Italy), a další
Vydáno: (1991)

Defects in semiconductors/
Autor: Narayan, J., a další
Vydáno: (1980)

Electron diffraction based techniques in scanning electron microscopy of bulk materials
Autor: Wilkinson, A, a další
Vydáno: (1998)

Electron diffraction based techniques in scanning electron microscopy of bulk materials
Autor: Wilkinson, A, a další
Vydáno: (1997)

Weakly Supervised Image Segmentation for Detecting Defects From Scanning Electron Microscopy Images in Semiconductor
Autor: Younghwan Lee, a další
Vydáno: (2024-01-01)

Depth Dependence of Electron Channeling Contrast Imaging in Gallium Nitride
Autor: Lavallee Etienne, a další
Vydáno: (2024-01-01)

Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films
Autor: Trager-Cowan, C, a další
Vydáno: (2007)

Compound semiconductor bulk materials and characterizations /
Autor: 173111 Oda, Osamu
Vydáno: (2007)

Quantitative simulations of electron channelling patterns and electron backscattering from crystals
Autor: Dudarev, S, a další
Vydáno: (1994)

Characterizing dislocation structure evolution during cyclic deformation using electron channelling contrast imaging
Autor: Ahmed, J, a další
Vydáno: (2006)

Electron Channeling Contrast Imaging (ECCI) of Ion Battery Cathode Materials
Autor: Naghizadeh Meysam, a další
Vydáno: (2024-01-01)

A Review on Machine and Deep Learning for Semiconductor Defect Classification in Scanning Electron Microscope Images
Autor: Francisco López de la Rosa, a další
Vydáno: (2021-10-01)

Automatic Semiconductor Wafer Image Segmentation for Defect Detection Using Multilevel Thresholding
Autor: Saad N.H., a další
Vydáno: (2016-01-01)

SEM imaging of contrast arising from different doping concentrations in semiconductors
Autor: Sealy, C, a další
Vydáno: (1995)

Weyl points and exceptional rings with polaritons in bulk semiconductors
Autor: R. L. Mc Guinness, a další
Vydáno: (2020-11-01)

Bulk versus Contact Doping in Organic Semiconductors
Autor: Chang-Hyun Kim
Vydáno: (2021-06-01)

Stabilization of semiconductor surfaces through bulk dopants
Autor: Nikolaj Moll, a další
Vydáno: (2013-01-01)