ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING

Ítems similars

• ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING
  per: Czernuszka, J, et al.
  Publicat: (1991)
• ELECTRON CHANNELING CONTRAST IMAGING OF DEFECTS IN SEMICONDUCTORS
  per: Wilkinson, A, et al.
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• ELECTRON CHANNELING CONTRAST IMAGING (ECCI) OF DISLOCATIONS IN BULK SPECIMENS
  per: Czernuszka, J, et al.
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• ELECTRON CHANNELING CONTRAST IMAGING OF INTERFACIAL DEFECTS IN STRAINED SILICON-GERMANIUM LAYERS ON SILICON
  per: Wilkinson, A, et al.
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• Effects of surface relaxation on electron channelling contrast images of misfit dislocations
  per: Wilkinson, A, et al.
  Publicat: (1994)