ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING

Slični predmeti

• ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING
  od: Czernuszka, J, i dr.
  Izdano: (1991)
• ELECTRON CHANNELING CONTRAST IMAGING OF DEFECTS IN SEMICONDUCTORS
  od: Wilkinson, A, i dr.
  Izdano: (1993)
• ELECTRON CHANNELING CONTRAST IMAGING (ECCI) OF DISLOCATIONS IN BULK SPECIMENS
  od: Czernuszka, J, i dr.
  Izdano: (1991)
• ELECTRON CHANNELING CONTRAST IMAGING OF INTERFACIAL DEFECTS IN STRAINED SILICON-GERMANIUM LAYERS ON SILICON
  od: Wilkinson, A, i dr.
  Izdano: (1993)
• Effects of surface relaxation on electron channelling contrast images of misfit dislocations
  od: Wilkinson, A, i dr.
  Izdano: (1994)