Transmission electron microscopy investigation of semiconductor quantum dots

Transmission electron microscopy investigation of semiconductor quantum dots

Transmission electron microscopy was used to study InGaAs/GaAs and Ge(Si)/Si quantum dots. Results on the detailed microstructural investigation using plan-view [001] zone-axis bright-field diffraction contrast imaging technique combined with image simulations are presented.

Dades bibliogràfiques
Autors principals:	Liao, X, Zou, J, Cockayne, D
Format:	Conference item
Publicat:	2000

Ítems similars

Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
per: Zou, J, et al.
Publicat: (1999)

Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots
per: Liao, X, et al.
Publicat: (1998)

Ensemble interactions in strained semiconductor quantum dots
per: Leon, R, et al.
Publicat: (1999)

Measurement of Diffusion and Segregation in Semiconductor Quantum Dots and Quantum Wells by Transmission Electron Microscopy: A Guide
per: Thomas Walther
Publicat: (2019-06-01)

The morphology and composition of quantum dots
per: Cockayne, D, et al.
Publicat: (2001)

Ordering, tunability, and stability in the formation of semiconductor quantum dots
per: Leon, R, et al.
Publicat: (1998)

Characterisation of the structure and composition of quantum dots
per: Cockayne, D, et al.
Publicat: (2001)

DISLOCATIONS IN SEMICONDUCTORS AS STUDIED BY WEAK-BEAM ELECTRON-MICROSCOPY
per: Cockayne, D, et al.
Publicat: (1979)

Image simulations of quantum dots
per: Lang, C, et al.
Publicat: (2001)

On-zone axis electron diffraction contrast study of the size of InGaAs/GaAs quantum dots
per: Liao, X, et al.
Publicat: (1998)

Wet electron microscopy with quantum dots
per: Winston Timp, et al.
Publicat: (2006-09-01)

Semiconductor quantum dots /
per: Banyai, L., (Ladislaus), et al.
Publicat: (1993)

Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)
per: Leon, R, et al.
Publicat: (2000)

Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator
per: Wong Vincent, et al.
Publicat: (2008-01-01)

Coherent manipulation of coupled electron spins in semiconductor quantum dots.
per: Petta, JR, et al.
Publicat: (2005)

Depolarization of Electronic Spin Qubits Confined in Semiconductor Quantum Dots
per: Dan Cogan, et al.
Publicat: (2018-12-01)

Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots
per: Liao, X, et al.
Publicat: (1999)

Annealing effects on the microstructure of Ge/Si(001) quantum dots
per: Liao, X, et al.
Publicat: (2001)

Inhibited carrier transfer in ensembles of isolated quantum dots
per: Lobo, C, et al.
Publicat: (1999)

Biosensing with Luminescent Semiconductor Quantum Dots
per: Hedi Mattoussi, et al.
Publicat: (2006-08-01)

Semiconductor Quantum Dots for Biomedicial Applications
per: Lijia Shao, et al.
Publicat: (2011-12-01)

Island shape instabilities and surfactant-like effects in the growth of InGaAs/GaAs quantum dots
per: Leon, R, et al.
Publicat: (1999)

Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/ GaAs quantum dots
per: Delgado, N. Fernandez, et al.
Publicat: (2016)

DISLOCATION GEOMETRIES IN SEMICONDUCTORS AND IN SEMICONDUCTOR HETEROSTRUCTURES
per: Cockayne, D, et al.
Publicat: (1991)

Optical orientation and spin polarization of the electrons and nuclei in semiconductor quantum dots
per: Moscalenco, Sveatoslav, et al.
Publicat: (2012-01-01)

CRITICAL THICKNESS DETERMINATION OF INXGA1-XAS/GAAS STRAINED-LAYER SYSTEM BY TRANSMISSION ELECTRON-MICROSCOPY
per: Zou, J, et al.
Publicat: (1991)

Optical properties of semiconductor “anisotropic” quantum dot
per: B.A. Lukiyanets, et al.
Publicat: (2021-12-01)

Investigation of Magnetic Circular Dichroism Spectra of Semiconductor Quantum Rods and Quantum Dot-in-Rods
per: Farrukh Safin, et al.
Publicat: (2020-05-01)

Investigation of the influences of wetting layer, size and shape of quantum dots on the energy states in INAS/GAAS semiconductor quantum dots
per: Gu, Zhenming.
Publicat: (2013)

Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation
per: Wellman, J, et al.
Publicat: (1999)

Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots (vol 82, pg 5148, 1999)
per: Liao, X, et al.
Publicat: (1999)

AN ELECTRON-DIFFRACTION AND MICROSCOPY INVESTIGATION OF QUASI-PERIODIC TA-AL SUPERLATTICES
per: Jiang, S, et al.
Publicat: (1992)

WEAK-BEAM ELECTRON-MICROSCOPY
per: Cockayne, D
Publicat: (1981)

Semiconductor colloidal quantum dots for photovoltaic applications
per: Cheng, C
Publicat: (2014)

Semiconductor quantum dots : organometallic and inorganic synthesis /
per: 583364 Green, Mar
Publicat: (2014)

Semiconductor quantum dots : physics, spectroscopy and applications /
per: Masumoto, Yasuaki, et al.
Publicat: (2002)

Semiconductor Quantum Dots: Synthesis, Properties and Applications
per: Donghai Feng, et al.
Publicat: (2024-11-01)

Resonant Light Absorption by Semiconductor Quantum Dots
per: I. G. Lang, et al.
Publicat: (2009-01-01)

Semiconductor Quantum Dots in Chemical Sensors and Biosensors
per: Nikos Chaniotakis, et al.
Publicat: (2009-09-01)

Measurement of Accumulation of Semiconductor Nanocrystal Quantum Dots by
per: Kenton L. Leigh, et al.
Publicat: (2012-07-01)