Transmission electron microscopy investigation of semiconductor quantum dots
Transmission electron microscopy was used to study InGaAs/GaAs and Ge(Si)/Si quantum dots. Results on the detailed microstructural investigation using plan-view [001] zone-axis bright-field diffraction contrast imaging technique combined with image simulations are presented.
Prif Awduron: | Liao, X, Zou, J, Cockayne, D |
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Fformat: | Conference item |
Cyhoeddwyd: |
2000
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Eitemau Tebyg
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Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
gan: Zou, J, et al.
Cyhoeddwyd: (1999) -
Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots
gan: Liao, X, et al.
Cyhoeddwyd: (1998) -
Ensemble interactions in strained semiconductor quantum dots
gan: Leon, R, et al.
Cyhoeddwyd: (1999) -
Measurement of Diffusion and Segregation in Semiconductor Quantum Dots and Quantum Wells by Transmission Electron Microscopy: A Guide
gan: Thomas Walther
Cyhoeddwyd: (2019-06-01) -
The morphology and composition of quantum dots
gan: Cockayne, D, et al.
Cyhoeddwyd: (2001)