Transmission electron microscopy investigation of semiconductor quantum dots

Transmission electron microscopy investigation of semiconductor quantum dots

Transmission electron microscopy was used to study InGaAs/GaAs and Ge(Si)/Si quantum dots. Results on the detailed microstructural investigation using plan-view [001] zone-axis bright-field diffraction contrast imaging technique combined with image simulations are presented.

書誌詳細
主要な著者:	Liao, X, Zou, J, Cockayne, D
フォーマット:	Conference item
出版事項:	2000

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