Stacking-fault imaging using transmission ion channeling.

This paper gives a detailed analysis of the necessary conditions for observing stacking faults using transmission ion channeling. It is shown that transmission ion channeling images of individual stacking faults at least 10 m below the surface of a 40-m-thick silicon crystal can be produced by mappi...

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Bibliographic Details
Main Authors: King, P, Breese, M, Wilshaw, P, Grime, G
Format: Journal article
Language:English
Published: 1995