Stacking-fault imaging using transmission ion channeling.
This paper gives a detailed analysis of the necessary conditions for observing stacking faults using transmission ion channeling. It is shown that transmission ion channeling images of individual stacking faults at least 10 m below the surface of a 40-m-thick silicon crystal can be produced by mappi...
| প্রধান লেখক: | , , , |
|---|---|
| বিন্যাস: | Journal article |
| ভাষা: | English |
| প্রকাশিত: |
1995
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