Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Despite the significant progress in the area, III-nitride LEDs still suffer from reduced efficiency due to a high dislocation density associated with a lack of suitable growth substrates and strong polarisation fields along the c-axis, the predominant growth direction, resulting in the quantum confi...

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Bibliografische gegevens
Hoofdauteurs:	Severs, J, Lozano, J, Hooper, S, Nellist, P
Formaat:	Conference item
Gepubliceerd in:	Institute of Physics Publishing 2014

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