Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes
Despite the significant progress in the area, III-nitride LEDs still suffer from reduced efficiency due to a high dislocation density associated with a lack of suitable growth substrates and strong polarisation fields along the c-axis, the predominant growth direction, resulting in the quantum confi...
| Автори: | , , , |
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| Формат: | Conference item |
| Опубліковано: |
Institute of Physics Publishing
2014
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