A novel mechanism of voltage sensing and gating in K2P potassium channels
मुख्य लेखकों: | Rapedius, M, Schewe, M, Nematian-Ardestani, E, Linke, T, Benndorf, K, Tucker, S, Baukrowitz, T |
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स्वरूप: | Conference item |
प्रकाशित: |
2014
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समान संसाधन
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A novel mechanism of voltage sensing and gating in K2P potassium channels
द्वारा: Schewe, M, और अन्य
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A Novel Mechanism of Voltage Sensing and Gating in K2P Potassium Channels
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A non-canonical voltage-sensing mechanism controls gating in K2P K(+) channels
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H bonding at the helix-bundle crossing controls gating in Kir potassium channels.
द्वारा: Rapedius, M, और अन्य
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