A novel mechanism of voltage sensing and gating in K2P potassium channels
Κύριοι συγγραφείς: | Rapedius, M, Schewe, M, Nematian-Ardestani, E, Linke, T, Benndorf, K, Tucker, S, Baukrowitz, T |
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Μορφή: | Conference item |
Έκδοση: |
2014
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Παρόμοια τεκμήρια
Παρόμοια τεκμήρια
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A novel mechanism of voltage sensing and gating in K2P potassium channels
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A Novel Mechanism of Voltage Sensing and Gating in K2P Potassium Channels
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A non-canonical voltage-sensing mechanism controls gating in K2P K(+) channels
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Insights into the structural nature of the transition state in the Kir channel gating pathway.
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H bonding at the helix-bundle crossing controls gating in Kir potassium channels.
ανά: Rapedius, M, κ.ά.
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