Abnormal photoluminescence properties of GaN nanorods grown on Si(111) by molecular-beam epitaxy.

Abnormal photoluminescence properties of GaN nanorods grown on Si(111) by molecular-beam epitaxy.

We have studied the photoluminescence properties of GaN nanorods grown on Si(111) substrates by radio-frequency plasma-assisted molecular-beam epitaxy. The hexagonal shaped nanorods with lateral average diameters from 30 to 150 nm are obtained by controlling the Ga flux with a fixed amount of nitrog...

Bibliografiset tiedot
Päätekijät:	Park, Y, Kang, T, Taylor, R
Aineistotyyppi:	Journal article
Kieli:	English
Julkaistu:	2008

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