The properties of nitrogen and oxygen in silicon
A novel dislocation locking technique is used to study the behaviour of nitrogen and oxygen in silicon. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen or oxygen diffuses to the dislocations. The str...
| প্রধান লেখক: | , |
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| অন্যান্য লেখক: | |
| বিন্যাস: | গবেষণাপত্র |
| ভাষা: | English |
| প্রকাশিত: |
2006
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| বিষয়গুলি: |