Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks.

Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks.

Semiconductor nanopyramids (NPs) provide advantages in the development of novel functional optoelectronic devices due to their unique size-dependent properties. Here we demonstrate a new method for the fabrication of selectively self-assembled single-crystalline GaN NPs on the m-plane of periodicall...

Podrobná bibliografie
Hlavní autoři:	Park, Y, Holmes, M, Taylor, R, Kim, K, Lee, S, Ju, H, Im, H
Médium:	Journal article
Jazyk:	English
Vydáno:	2012

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