Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks.

Antzeko izenburuak

• Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks (vol 23, 405602, 2012)
  nork: Park, Y, et al.
  Argitaratua: (2012)
• Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods.
  nork: Park, Y, et al.
  Argitaratua: (2010)
• Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
  nork: Park, Y, et al.
  Argitaratua: (2018)
• On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
  nork: Kyaw, Zabu, et al.
  Argitaratua: (2014)
• Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
  nork: Sun, Xiaowei, et al.
  Argitaratua: (2013)