Electrical and structural analysis of high-dose Si implantation in GaN

Slični predmeti

• TEM investigations of Si ion-implanted GaN
  od: Zou, J, i dr.
  Izdano: (1998)
• Damage to epitaxial GaN layers by silicon implantation
  od: Tan, H, i dr.
  Izdano: (1996)
• Ion implantation processing of GaN epitaxial layers
  od: Tan, H, i dr.
  Izdano: (1996)
• Annealing of ion implanted gallium nitride
  od: Tan, H, i dr.
  Izdano: (1998)
• AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics
  od: Justinas Jorudas, i dr.
  Izdano: (2020-12-01)