Electrical and structural analysis of high-dose Si implantation in GaN

Ítems similars

• TEM investigations of Si ion-implanted GaN
  per: Zou, J, et al.
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• Damage to epitaxial GaN layers by silicon implantation
  per: Tan, H, et al.
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• Ion implantation processing of GaN epitaxial layers
  per: Tan, H, et al.
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• Annealing of ion implanted gallium nitride
  per: Tan, H, et al.
  Publicat: (1998)
• AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics
  per: Justinas Jorudas, et al.
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