An enhanced alneal process to produce SRV <1 cm/s in 1Ωcm n-type Si

An enhanced alneal process to produce SRV <1 cm/s in 1Ωcm n-type Si

The alneal is one of the most effective methods of electrically passivating a silicon surface, and has been used by numerous research groups since the 1980s. In this work, we present an enhanced alneal process that substantially improves its effectiveness. Previously, the success afforded by the sta...

Bibliografski detalji
Glavni autori:	Collett, K, Bonilla Osorio, R, Hamer, P, Bourret-Sicotte, G, Lobo, R, Kho, T, Wilshaw, P
Format:	Journal article
Izdano:	Elsevier 2017

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