InP nanowires grown by SA-MOVPE

InP nanowires grown by SA-MOVPE

A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K. © 2012 IEEE.

Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид:	Gao, Q, Tan, H, Fu, L, Parkinson, P, Breuer, S, Wong-Leung, J, Jagadish, C
Формат:	Conference item
Хэвлэсэн:	2012

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