ATOM-PROBE FIELD-ION MICROSCOPE STUDIES OF PALLADIUM SILICIDE ON SILICON
Palladium silicide coated silicon specimens have been formed by thermally evaporating palladium onto clean field evaporated n-type silicon (100) tips. The thin palladium overlayer is reacted to form palladium silicide by thermal annealing at 675 K. The tips were studied by field ion imaging, pulsed...
Үндсэн зохиолчид: | King, R, Mackenzie, R, Smith, G, Cade, N |
---|---|
Формат: | Conference item |
Хэвлэсэн: |
1995
|
Ижил төстэй зүйлс
-
FIELD-EMISSION AND ATOM-PROBE FIELD-ION MICROSCOPE STUDIES OF PALLADIUM-SILICIDE-COATED SILICON EMITTERS
-н: King, R, зэрэг
Хэвлэсэн: (1995) -
FIELD-EMISSION AND ATOM-PROBE FIELD-ION MICROSCOPE STUDIES OF PALLADIUM SILICIDE COATED SILICON EMITTERS
-н: King, R, зэрэг
Хэвлэсэн: (1994) -
FIELD-EMISSION AND ATOM-PROBE FIELD-ION MICROSCOPE ANALYSIS OF GRIDDED SILICON FIELD EMITTERS
-н: Huang, M, зэрэг
Хэвлэсэн: (1994) -
ATOM-PROBE ANALYSIS AND FIELD-EMISSION STUDIES OF SILICON
-н: King, R, зэрэг
Хэвлэсэн: (1994) -
FIELD-ION MICROSCOPE ATOM PROBE STUDIES OF METALLIC GLASSES
-н: Bhatti, A, зэрэг
Хэвлэсэн: (1985)