EFFECTS OF HIGH UNIAXIAL STRESS ON FAR INFRA-RED IMPURITY SPECTRA OF HIGH-PURITY NORMAL-TYPE AND PARA-TYPE SILICON

EFFECTS OF HIGH UNIAXIAL STRESS ON FAR INFRA-RED IMPURITY SPECTRA OF HIGH-PURITY NORMAL-TYPE AND PARA-TYPE SILICON

Detalles Bibliográficos
Autores principales: Cooke, R, Nicholas, R, Stradling, R, Portal, J, Askenazy, S
Formato: Journal article
Publicado: 1978

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