EFFECTS OF HIGH UNIAXIAL STRESS ON FAR INFRA-RED IMPURITY SPECTRA OF HIGH-PURITY NORMAL-TYPE AND PARA-TYPE SILICON

EFFECTS OF HIGH UNIAXIAL STRESS ON FAR INFRA-RED IMPURITY SPECTRA OF HIGH-PURITY NORMAL-TYPE AND PARA-TYPE SILICON

מידע ביבליוגרפי
Main Authors: Cooke, R, Nicholas, R, Stradling, R, Portal, J, Askenazy, S
פורמט: Journal article
יצא לאור: 1978

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