Bias-dependent STM investigations of trimethylgallium adsorption on Si(001) at elevated temperatures

Míreanna comhchosúla

• ADSORPTION OF TRIMETHYLGALLIUM ON SEMICONDUCTOR SURFACES - STM OBSERVATIONS
  de réir: Mayne, A, et al.
  Foilsithe / Cruthaithe: (1993)
• An elevated temperature STM study of the Si(001) c(4x4) surface reconstruction
  de réir: Norenberg, H, et al.
  Foilsithe / Cruthaithe: (1999)
• Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
  de réir: Owen, J, et al.
  Foilsithe / Cruthaithe: (1997)
• IDENTIFICATION OF THE SI(001) MISSING DIMER DEFECT STRUCTURE BY LOW-BIAS VOLTAGE STM AND LDA MODELING
  de réir: Owen, J, et al.
  Foilsithe / Cruthaithe: (1995)
• Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
  de réir: Goldfarb, I, et al.
  Foilsithe / Cruthaithe: (1999)